M. Höhne

2 ta ish

Leibniz Institute for Crystal Growth

1. Oxygen-containing radiation defects in Si1−xGex

   Yu.V. Pomozov, Mikhail G. Sosnin, Lyudmila I. Khirunenko +4

   Maqola20002 iqtibos

   ABIABI:AkademIndex/2026.other.251136

2. Radiation Defects Formation in Si<Ge>

   Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin +3

   Maqola19992 iqtibos

   ABIABI:AkademIndex/2026.other.609963