C.R. Viswanathan

1 ta ish

University of California, Los Angeles

1. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

   Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao +2

   Maqola20002 iqtibos

   ABIABI:AkademIndex/2026.other.536309