Jong‐Ho Lee

1 ta ish

Samsung (South Korea)

1. Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al₂O₃/p-Si Metal–Oxide–Semiconductor Capacitor

   In Sang Jeon, Jaehoo Park, Dail Eom +7

   Maqola20032 iqtibos

   ABIABI:AkademIndex/2026.other.396755