C. H. Tung

1 ta ish

Institute of Microelectronics

1. The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

   L.J. Jin, K. L. Pey, W. K. Choi +6

   Maqola20042 iqtibos

   ABIABI:AkademIndex/2026.other.667150