Sh. Kh. Iulchiev

1 ta ish

Oʻzbekiston Milliy Universiteti

1. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

   П. Б. Парчинский, L. G. Ligai, Kh. Zh. Mansurov +1

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20050 iqtibos

   ABIABI:AkademIndex/2005.article.000253