Sh. D. Sultonov

1 ta ish

Fargʻona politexnika instituti

1. <title>Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)</title>

   A. M. Rasulov, A.A. Dzhurakhalov, F. F. Umarov +2

   MaqolaIon-surface interactions and analysisProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20050 iqtibos

   ABIABI:AkademIndex/2005.article.000327