Benny Van Daele

1 ta ish

University of Antwerp

1. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

   Kai Cheng, Maarten Leys, Stefan Degroote +7

   Maqola20063 iqtibos

   ABIABI:AkademIndex/2026.other.714979