Siegfried Karg

1 ta ish

IBM (United States)

1. Role of Oxygen Vacancies in Cr‐Doped SrTiO₃ for Resistance‐Change Memory

   M. Janousch, G. I. Meijer, U. Staub +3

   MaqolaOAOchiq kirish20074 iqtibos

   ABIABI:AkademIndex/2026.other.043171