L. Frey

1 ta ish

Fraunhofer Institute for Integrated Systems and Device Technology

1. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

   Johannes Müller, T. S. Böscke, D. Bräuhaus +6

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.117992