A. V. Nenashev

2 ta ish

Russian Academy of Sciences

1. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

   D. S. Abramkin, К. С. Журавлев, Т. С. Шамирзаев +2

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.367665

2. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

   D. S. Abramkin, М. О. Петрушков, E. A. Emelyanov +7

   Maqola20212 iqtibos

   ABIABI:AkademIndex/2026.other.452999