J. D. Lee

1 ta ish

Japan Advanced Institute of Science and Technology

1. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>M</mml:mi><mml:msub><mml:mi>X</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>semiconductors (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>M</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>=</mml:mo></mml:math>Mo, W;<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>X</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>=</mml:mo></mml:math>S, Se, Te)

   Won Seok Yun, Sang Wook Han, Soon Cheol Hong +2

   Maqola20122 iqtibos

   ABIABI:AkademIndex/2026.other.548729