M. Halillaev

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1. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

   A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

   MaqolaOAOchiq kirishSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20150 iqtibos

   ABIABI:AkademIndex/2015.article.000894