Yoshio Nishi

1 ta ish

Stanford University

1. HfO<sub>2</sub>-Based RRAM: Electrode Effects, Ti/HfO<sub>2</sub> Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and <italic>Ab Initio</italic> Calculations

   Boubacar Traoré, P. Blaise, Elisa Vianello +3

   Maqola20152 iqtibos

   ABIABI:AkademIndex/2026.other.117996