М. А. Моховиков

1 ta ish

Institute of Applied Physics

1. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

   А. Ф. Комаров, Ф. Ф. Комаров, O. V. Milchanin +5

   Maqola20153 iqtibos

   ABIABI:AkademIndex/2026.other.362961