Tsung‐Ming Tsai

1 ta ish

National Sun Yat-sen University

1. Ultra-Low Switching Voltage Induced by Inserting SiO₂Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

   Chih‐Cheng Shih, Wen‐Jen Chen, Kuan‐Chang Chang +12

   Maqola20162 iqtibos

   ABIABI:AkademIndex/2026.other.106091