V. V. Luchinin

1 ta ish

Saint Petersburg State Electrotechnical University

1. Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

   Aleksey Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin +5

   Maqola20162 iqtibos

   ABIABI:AkademIndex/2026.other.545717