Dae‐Young Lee

1 ta ish

Samsung (United States)

1. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

   N. Loubet, Terence B. Hook, P. Montanini +61

   Maqola20173 iqtibos

   ABIABI:AkademIndex/2026.other.447594