Ghulam Hussain

3 ta ish

Riphah International University

1. Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

   Muhammad Waqas Iqbal, Aliya Amin, Muhammad Arshad Kamran +7

   Maqola20193 iqtibos

   ABIABI:AkademIndex/2026.other.073858

2. Formation of an MoTe₂ based Schottky junction employing ultra-low and high resistive metal contacts

   Sikandar Aftab, Muhammad Waqas Iqbal, Amir Muhammad Afzal +4

   MaqolaOAOchiq kirish20193 iqtibos

   ABIABI:AkademIndex/2026.other.108550

3. A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping

   Muhammad Waqas Iqbal, Ehsan Elahi, Aliya Amin +4

   Maqola20203 iqtibos

   ABIABI:AkademIndex/2026.other.134014