Jeffrey W. Daulton

1 ta ish

Massachusetts Institute of Technology

1. 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

   Tyler A. Growden, Evan M. Cornuelle, David F. Storm +7

   Maqola20192 iqtibos

   ABIABI:AkademIndex/2026.other.410279