N. B. Adilov

1 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

1. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

   Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

   MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 iqtibos

   ABIABI:AkademIndex/2026.other.470164