A. A. Usmonov

2 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

   М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

   MaqolaSilicon and Solar Cell TechnologiesInorganic Materials20228 iqtibos

   ABIABI:AkademIndex/2022.article.000633

2. Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

   Zikrillayev Kh. F., K. S. Ayupov, G. H. Mavlonov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 iqtibos

   ABIABI:AkademIndex/2022.article.000912