R. U. Siddikov

2 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

   I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

   MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos

   ABIABI:AkademIndex/2023.article.000847

2. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

   I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

   MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 iqtibos

   ABIABI:AkademIndex/2026.other.432352