Latofat S. Karieva

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20234 iqtibos

   ABIABI:AkademIndex/2023.article.001522