Muhammad Iznul Hisyam

1 ta ish

University of Malaya

1. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

   Marwan Mansor, Rizuan Norhaniza, Ahmad Shuhaimi Abu Bakar +4

   Maqola20232 iqtibos

   ABIABI:AkademIndex/2026.other.714986