A.R. Akhmedov

1 ta ish

Uzbe ikromjon alijonov Mexanizatsiyalash Muhandislari Instituti

1. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

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   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Science20241 iqtibos

   ABIABI:AkademIndex/2024.article.002436