Vladimir S. Kharlamov

1 ta ish

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

   R.A. Yankov, M. Voelskow, W. Kreissig +6

   MaqolaSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000097