György Vida

1 ta ish

Budapest University of Technology and Economics

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000164