Susanne Karlsson

1 ta ish

1. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

   Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000171