Gerhard Pensl

1 ta ish

Friedrich-Alexander-Universität Erlangen-Nürnberg

1. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000128