R. E. Peale

1 ta ish

Univ. of Central Florida (United States)

1. Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers

   E. W. Nelson, M. V. Dolguikh, Elena Flitsiyan +5

   MaqolaLaser Material Processing TechniquesProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000243