Т. П. Попова

1 ta ish

Russian Academy of Sciences

1. Investigation of 4H-SiC Layers Implanted by Al Ions

   E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2

   MaqolaSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20070 iqtibos

   ABIABI:AkademIndex/openalex/2007.article.000171