C. C. Tin

1 ta ish

Department of Physics, Auburn University, Auburn, USA;

1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390741