Nilufar G. Saidkhanova

1 ta ish

Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan

1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390741