R. M. Erkulov

4 ta ish

Institute of Ion–Plasma and Laser Technologies, 100125, Tashkent, Uzbekistan

1. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

   З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

   MaqolaSemiconductor materials and interfacesTechnical Physics20208 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.365534

2. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

   Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

   MaqolaIon-surface interactions and analysisTechnical Physics20192 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.492991

3. Influence of oxygen ion implantation on composition and structure of free nanofilm Si/Cu system

   З. А. Исаханов, М. К. Рузибаева, Sh.I. Khamrokulov +3

   MaqolaAdvanced Surface Polishing Techniques20190 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.002075

4. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20210 iqtibos

   ABIABI:AkademIndex/openalex/2021.article.004233