G.J. Mamatova

1 ta ish

Andijan state pedagogical institute, Andijan, Uzbekistan

1. Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal

   T. Z. Nasirov, Akmal Turayev, M.A. Muydinova +1

   MaqolaSemiconductor materials and interfacesE3S Web of Conferences20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.012035