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Khusniddin J. Matchonov

4 ta ish

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

  1. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20245 iqtibos
    ABI

  2. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20243 iqtibos
    ABI

  3. Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +3

    MaqolaIon-surface interactions and analysisEast European Journal of Physics20250 iqtibos
    ABI

  4. Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +2

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos
    ABI