Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Interstitial mechanism of the low-temperature gold migration in silicon

1. Influence of structure defects on the radiation enhanced gold diffusion in silicon

   A. I. Koifman, N. Narkulov, Marat S. Yunusov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19751 iqtibos

   ABIABI:AkademIndex/2026.other.655288

2. The low-temperature doping of silicon by radiation-induced diffusion

   A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19760 iqtibos

   ABIABI:AkademIndex/1976.article.000045