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Accommodation coefficients for low-energy ions on metal surfaces

Ubai A. ArifovInstitute for Electronics, Uzbek Academy of Sciences , Tashkent, USSRD. D. GruichInstitute for Electronics, Uzbek Academy of Sciences , Tashkent, USSRG. E. ErmakovInstitute for Electronics, Uzbek Academy of Sciences , Tashkent, USSRE.S. ParilisInstitute for Electronics, Uzbek Academy of Sciences , Tashkent, USSRN. Y. TurayevInstitute for Electronics, Uzbek Academy of Sciences , Tashkent, USSRF. F. UmarovInstitute for Electronics, Uzbek Academy of Sciences , Tashkent, USSR
1973en

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The interaction of low-energy ions (E = 3 to 100 eV) with the surface of a solid cannot be treated in terms of gas dynamics. The scattering of particles at an energy of E o > 20 eV may be explained in terms of binary collisions with the atoms of the target. The validity of the single collision model with free surface atoms for medium energies from 10 to 100 eV and even down to 1 eV was confirmed on the basis of both experimental and computational data. This paper describes experimental studies of the secondary ion emission from the (100) and (110) faces of a Mo single crystal and both experimental and theoretical studies of alkaline ion accommodation coefficient on polycrystalline Mo within the energy range E = 3 to 50 eV with a varying direction of the primary ion beam from normal to the glancing angle of incidence (ρ = 0 to 75°). On the basis of the retarding potential method using a spherical condenser whose central electrode was the target, we measured the energy distribution of secondary ions. Calculations have been performed for the energy of scattered ions and the high energy portion of accommodation coefficient on the basis of single and double binary collisions using the Born-Mayer potential and taking into consideration the influence of adsorption forces at the surface of the target.

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