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Tunneling injection of electrons into thin normal-metal films

V. P. SeminozhenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRA. A. YatsenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR

Soviet Journal of Low Temperature Physicsjournal1978en

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Annotatsiya

We examine the formation of a substantial non-Fermi electron distribution near the Fermi surface of a normal (N) metal placed as a thin film in a tunnel structure of the type N1-I-N-I-N1 (I is an insulator, N1 is a bulk electrode). Conditions are obtained for forming a terrace in the electron energy distribution of the middle film at the Fermi surface, due to the tunnel current through such a system.

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Mavzular

Surface and Thin Film Phenomena Electron and X-Ray Spectroscopy Techniques Semiconductor materials and devices

Identifikatorlar

DOI: 10.1063/10.0029787

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