Nonequilibrium states of normal metal films during tunneling injection of electrons
V. P. SeminozhenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
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ABI
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The nonequilibrium states of a metal film in the normal (N) state in an S-I-N-I-S structure (S is a bulk superconductor and I is an insulator) are studied when a voltage V > Δ/e is applied to each tunnel diode in the same direction (Δ is the energy gap of the S electrode and e is the electron charge). Conditions are found in which the energy distribution of electrons near the Fermi surface of the N film is inverted.
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