Ionization-enhanced crystallization of phosphorus implanted silicon layers

The influence of ionization density on the annealing properties of silicon layers implanted with 1.2 × 1014-l × 1015 cm−2 of phosphourus ions has been studied. The ionization background was created by high energy electrons from a Van de Graaff accelerator with the beam density on a sample in the range of 2.5–25 μA/cm 2. The dependence of the crystallization growth rate vg on the e-h recombination rate has been observed. An exponential dependence of the growth rate vg on the ionization density was observed for amorphized and nonamorphized Si layers. No change of the activation energy Ea . in the used beam density range was noticed.

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