Features of the self-trapping of highly excited states in neon and argon crystals at low temperature

We have examined the luminescence from highly excited self-trapped one-center states, the relaxation processes of the band excitations, and the mechanisms of formation of highly excited quasiatomic centers in low-temperature crystals of the light rare gases and their solid solutions. The fundamental channel of population of highly excited emitting centers involves hole self-trapping with formation of two-center R2+ states; dissociative recombination of these forms one-center np5(n + 1)p excitations. We discuss the effect of self-trapping of highly excited states on the population of the lowest emitting centers in neon and argon crystals.

Hali tarjima qilinmagan