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Electron localization as a possible explanation of the low-temperature increase in the resistance of thin bismuth films

Yu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovYu. V. NikitinPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov

Soviet Journal of Low Temperature Physicsjournal1981en

Ochiq kirish: yoʻq

ABI

Annotatsiya

The paper considers the logarithmic addition to electrical resistance, which determines the increase in the resistance of thin bismuth films as the temperature is lowered below Tmin≃5 — 10 °K, as well as their anomalous magnetoresistance. These effects are considered in conjunction with theoretical calculations of the mechanisms of electron localization and electron-electron interaction with elastic electron scattering.

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Mavzular

Quantum and electron transport phenomena Surface and Thin Film Phenomena Semiconductor materials and devices

Identifikatorlar

DOI: 10.1063/10.0030613

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