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Low-temperature thermal conductivity of uniaxially compressed ln4Se3 layered crystals

E. AndersPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovI. V. VolchokPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov

Soviet Journal of Low Temperature Physicsjournal1981en

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ABI

Annotatsiya

The low-temperature thermal conductivity along and across the layers of In4Se3 crystals uniaxially compressed in the direction perpendicular to the layer plane is investigated. The role of the factors that may be responsible for the decrease observed to occur in the thermal-conductivity anisotropy upon the deformation of the crystals is discussed. Some procedural details of the experiment under compression conditions are presented.

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Mavzular

Chalcogenide Semiconductor Thin Films Advanced Thermoelectric Materials and Devices Phase-change materials and chalcogenides

Identifikatorlar

DOI: 10.1063/10.0030556

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