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Effect of electron localization in bismuth films: The influence of surface scattering

А. В. БутенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , KharkovYu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , KharkovE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , Kharkov

Soviet Journal of Low Temperature Physicsjournal1983en

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Annotatsiya

The electron localization effect in thin bismuth films (100-200 Å thick) leads to an anomalous positive magnetoresistance due to strong spin-orbit interaction for elastic scattering of electrons (τso≪τɸ, where τso is the spin relaxation time due to spin-orbit interaction for elastic scattering of electrons, τɸ is the inelastic scattering time. It was found that on increasing the film thickness (L &gt; 200 Å) a negative component of magnetoresistance appears that is specially pronounced in parallel fields. The change in the shape of the magnetoresistance curves is related to the increase in τso on increasing the thickness as a result of decreased surface scattering; a parallel magnetic field then has an additional influence on the surface scattering contribution.

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Mavzular

Quantum and electron transport phenomena Surface and Thin Film Phenomena Physics of Superconductivity and Magnetism

Identifikatorlar

DOI: 10.1063/10.0031017

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