The Capacitance and Characteristic Relaxation Times at Carrier Exclusion in Compensated Semiconductors with Deep Traps and Non-Injecting Contacts
D. A. AronovS.V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentB. R. MamatkulovV. I. Lenin State University, Tashkent
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