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Direct-current skinning in inhomogeneous bismuth single crystals

Yu. A. BogodPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovVit. B. Krasovitskiı̆Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovE. T. LemeshevskayaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov

Soviet Journal of Low Temperature Physicsjournal1985en

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Annotatsiya

It is shown that when single-crystal bismuth specimens that have a homogeneous defect distribution are in a transverse magnetic field the direct electric current is displaced to one of the boundary surfaces. The experimental results are compared with the calculated potential distribution.

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Mavzular

Thermodynamic and Structural Properties of Metals and Alloys Thermography and Photoacoustic Techniques Solid-state spectroscopy and crystallography

Identifikatorlar

DOI: 10.1063/10.0031247

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