Radiative Recombination at Centres in Germanium–Silicon Solid Solutions

Abstract The changes occuring in the spectra of exciton‐impurity complexes (EIC) and in the spectra caused by radiation defects (electron‐oscillating series with the head lines of 1.0097 and 1.0186 eV) according to the content of GexSi1−x solid solution in the range of x < 0.1 are studied. Substantial variations of the shift and the width of the spectrum lines of different types of the centres with the solid solution content are found. The problems of GexSi1−x content influence on the luminescence spectra characteristics caused by different recombination mechanisms are discussed. It is concluded that the lines of 1.0097 and 1.0186 eV are conditioned by the internal transition of electrons from an excited state of the active centre into the ground one.

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