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Electron localization in antimony films in a parallel magnetic field

А. В. БутенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov

Soviet Journal of Low Temperature Physicsjournal1986en

Ochiq kirish: yoʻq

ABI

Annotatsiya

The dependence of the localized correction to the magnetoconductivity in thin antimony films is studied. The behavior of this correction in a magnetic field parallel to the plane of the film is compared with the theory that takes into account the diffuse scattering of electrons by the surface of the films in which the volume mean-free path exceeds the thickness.

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Mavzular

Surface and Thin Film Phenomena Magnetic Properties and Applications Advanced Materials Characterization Techniques

Identifikatorlar

DOI: 10.1063/10.0031442

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