Effects of fluctuations on the tunneling conductance of tin films
Mikhail BelogolovskiiPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR , DonetskA. I. KhachaturovPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR , DonetskO. I. ChernyakPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR , Donetsk
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The differential resistance of aluminum–insulator–tin tunneling structure is measured. The resistance is found to have peculiarities due to fluctuations of the density of one-particle states in the tin film.
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